The Resource Fundamentals of infrared detector materials, Michael A. Kinch, (electronic resource)

Fundamentals of infrared detector materials, Michael A. Kinch, (electronic resource)

Label
Fundamentals of infrared detector materials
Title
Fundamentals of infrared detector materials
Statement of responsibility
Michael A. Kinch
Creator
Contributor
Subject
Language
eng
Summary
The choice of available infrared (IR) detectors for insertion into modern IR systems is both large and confusing. The purpose of this volume is to provide a technical database from which rational IR detector selection criteria evolve, and thus clarify the options open to the modern IR system designer. Emphasis concentrates mainly on high-performance IR systems operating in a tactical environment, although there also is discussion of both strategic environments and low- to medium-performance system requirements
Member of
Additional physical form
Also available in print.
Cataloging source
CaBNvSL
Illustrations
illustrations
Index
index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
Series statement
Tutorial texts in optical engineering
Series volume
v. TT76
Target audience
  • adult
  • specialized
Label
Fundamentals of infrared detector materials, Michael A. Kinch, (electronic resource)
Authority link
http://lccn.loc.gov/2007028531
Link
http://dx.doi.org/10.1117/3.741688
Publication
Note
  • (Original)
  • "SPIE digital library."
  • Title from PDF t.p. (viewed on 8/23/09)
Bibliography note
Includes bibliographical references (p. 165-168) and index
Color
black and white
Contents
  • 1. Introduction. 2. IR detector performance criteria. 2.1. Photon detectors -- 2.2. Thermal detectors
  • 3. IR detector materials: a technology comparison. 3.1. Intrinsic direct bandgap semiconductor -- 3.2. Extrinsic semiconductor -- 3.3. Quantum well IR photodetectors (QWIPs) -- 3.4. Silicon schottky barrier detectors -- 3.5. High-temperature superconductor -- 3.6. Conclusions
  • 4. Intrinsic direct bandgap semiconductors. 4.1. Minority carrier lifetime -- 4.2. Diode dark current models -- 4.3. Binary compounds -- 4.4. Ternary alloys -- 4.5. Pb1-x SnxTe -- 4.6. Type III superlattices -- 4.7. Type II superlattices -- 4.8. Direct bandgap materials: conclusions
  • 5. HgCdTe: material of choice for tactical systems. 5.1. HgCdTe material properties -- 5.2. HgCdTe device architectures -- 5.3. ROIC requirements -- 5.4. Detector performance -- 5.5. HgCdTe: conclusions
  • 6. Uncooled detection. 6.1. Thermal detection -- 6.2. Photon detection -- 6.3. Uncooled photon vs. thermal detection limits -- 6.4. Uncooled detection: conclusions
  • 7. HgCdTe electron avalanche photodiodes (EAPDs). 7.1. McIntyre's avalanche photodiode model -- 7.2. Physics of HgCdTe EAPDs -- 7.3. Empirical model for electron avalanche gain in HgCdTe -- 7.4. Room-temperature HgCdTe APD performance -- 7.5. Monte Carlo modeling -- 7.6. Conclusions
  • 8. Future HgCdTe developments. 8.1. Dark current model -- 8.2. The separate absorption and detection diode structure -- 8.3. Multicolor and multispectral FPAs -- 8.4. High-density FPAs -- 8.5. Low background operation -- 8.6. Higher operating temperatures -- 8.7. Conclusion -- Epilogue -- Appendix A. Mathcad program for HgCdTe diode dark -- Current modeling -- References -- About the author -- Index
Control code
ocn435912138
Dimensions
unknown
Extent
1 online resource (xii, 173 p. : ill.)
File format
multiple file formats
Form of item
online
Governing access note
Restricted to subscribers or individual electronic text purchasers
Isbn
9780819467317
Other physical details
digital file.
Reformatting quality
access
Specific material designation
remote
System control number
  • (Sirsi) o435912138
  • (OCoLC)435912138
System details
  • Mode of access: World Wide Web
  • System requirements: Adobe Acrobat Reader

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