Coverart for item
The Resource Nanometer variation-tolerant SRAM : circuits and statistical design for yield, Mohamed H. Abu-Rahma, Mohab Anis, (electronic resource)

Nanometer variation-tolerant SRAM : circuits and statistical design for yield, Mohamed H. Abu-Rahma, Mohab Anis, (electronic resource)

Label
Nanometer variation-tolerant SRAM : circuits and statistical design for yield
Title
Nanometer variation-tolerant SRAM
Title remainder
circuits and statistical design for yield
Statement of responsibility
Mohamed H. Abu-Rahma, Mohab Anis
Creator
Contributor
Subject
Language
eng
Summary
"Variability is one of the most challenging obstacles for IC design in nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. Nanometer Variation-Tolerant SRAM: Circuits and Statistical Design for Yield is the main resource of robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. This book combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. It is an essential reference for researches, professionals and students working on SRAM design and digital circuits in general"--Provided by publisher
Cataloging source
GW5XE
Illustrations
illustrations
Index
index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
Label
Nanometer variation-tolerant SRAM : circuits and statistical design for yield, Mohamed H. Abu-Rahma, Mohab Anis, (electronic resource)
Link
http://dx.doi.org/10.1007/978-1-4614-1749-1
Instantiates
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
Color
multicolored
Contents
  • Variability in nanometer technologies and impact on SRAM
  • Variation-tolerant SRAM write and read assist techniques
  • Reducing SRAM power using fine-grained wordline pulse width control
  • A methodology for statistical estimation of read access yield in SRAMs
  • Characterization of SRAM sense amplifier input offset for yield prediction
Control code
ocn812017268
Dimensions
unknown
Extent
1 online resource (170 p.)
File format
unknown
Form of item
online
Isbn
9781461417491
Isbn Type
(electronic bk.)
Level of compression
unknown
Other physical details
ill.
Quality assurance targets
not applicable
Reformatting quality
unknown
Sound
unknown sound
Specific material designation
remote
System control number
(OCoLC)812017268
Label
Nanometer variation-tolerant SRAM : circuits and statistical design for yield, Mohamed H. Abu-Rahma, Mohab Anis, (electronic resource)
Link
http://dx.doi.org/10.1007/978-1-4614-1749-1
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
Color
multicolored
Contents
  • Variability in nanometer technologies and impact on SRAM
  • Variation-tolerant SRAM write and read assist techniques
  • Reducing SRAM power using fine-grained wordline pulse width control
  • A methodology for statistical estimation of read access yield in SRAMs
  • Characterization of SRAM sense amplifier input offset for yield prediction
Control code
ocn812017268
Dimensions
unknown
Extent
1 online resource (170 p.)
File format
unknown
Form of item
online
Isbn
9781461417491
Isbn Type
(electronic bk.)
Level of compression
unknown
Other physical details
ill.
Quality assurance targets
not applicable
Reformatting quality
unknown
Sound
unknown sound
Specific material designation
remote
System control number
(OCoLC)812017268

Library Locations

    • ERDC - Vicksburg (US Army Engineer Research and Development Center) Borrow it
      3909 Halls Ferry Road, Vicksburg, MS, 39180-6199, US
      32.3019214 -90.8733482
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